My Library

LEADER 00000nam a2200253 a 4500 
001    u29466 
001    30186 
003    SIRSI 
005    20100714101700.0 
008    140710s2009    si a00000b0000001100eng0d 
020    9780470823422 (cloth) 
020    0470823429 (cloth) 
049    JURF 
050 00 TK7874.75|bB52 2009 
100 1  Bhattacharyya, A. B.|q(Amalendu Bhushan) 
245 10 Compact MOSFET models for VLSI design /|cA. B. 
       Bhattacharyya. 
260    Singapore ;|aHoboken, NJ :|bJohn Wiley & Sons (Asia) ;
       |a[Piscataway, NJ] :|bIEEE Press,|c2009 
300    xxiv, 432 p. :|bill. ;|c26 cm. 
504    Includes bibliographical references and index. 
505 0  Semiconductor physics review for MOSFET modeling -- Ideal 
       metal oxide semiconductor capacitor -- Non-ideal and non-
       classical MOS capacitors -- Long channel MOS transistor --
       The scaled MOS transistor -- Quasistatic, non-quasistatic,
       and noise models -- Quantum phenomena in MOS transistors -
       - Non-classical MOSFET structures -- Appendix A : 
       expression for electric field and potential variation in 
       the semiconductor space charge under the gate -- Appendix 
       B : features of select compact MOSFET models -- Appendix C
       : PSP two-point collocation method. 
650  0 Integrated circuits|xVery large scale integration|xDesign 
       and construction 
650  0 Metal oxide semiconductor field-effect transistors|xDesign
       and construction