My Library

LEADER 00000nam a2200289 a 4500 
001    u31857 
001    32602 
003    SIRSI 
005    20110524140500.0 
008    230511s2012    xxua0000000000000100eng0d 
020    9780195388039 (hardback) 
020    0195388038 (hardback) 
020    9780199896349 
049    JURF 
050  4 TK7871.85|bD54697 2012 
100 1  Dimitrijev, Sima|d1958- 
245 1  Principles of semiconductor devices /|cSima Dimitrijev. 
250    2nd ed 
260    New York :|bOxford University Press,|c2012 
300    xix, 620 p. :|bill. ;|c25 cm. 
440    The Oxford series in electrical and computer engineering 
504    Includes bibliographical references and index. 
520 0  "The dimensions of modern semiconductor devices are 
       reduced to the point where classical semiconductor theory,
       including the concepts of continuous particle 
       concentration and continuous current, becomes 
       questionable. Further questions relate to two-dimensional 
       transport in the most important field-effect devices and 
       one-dimensional transport in nanowires and carbon 
       nanotubes. Designed for upper-level undergraduate and 
       graduate courses, Principles of Semiconductor Devices, 
       Second Edition, presents the semiconductor-physics and 
       device principles in a way that upgrades classical 
       semiconductor theory and enables proper interpretations of
       numerous quantum effects in modern devices. The 
       semiconductor theory is directly linked to practical 
       applications, including the links to the SPICE models and 
       parameters that are commonly used during circuit design. 
       The text is divided into three parts: Part I explains 
       semiconductor physics; Part II presents the principles of 
       operation and modeling of the fundamental junctions and 
       transistors; and Part III provides supplementary topics, 
       including a dedicated chapter on the physics of nanoscale 
       devices, description of the SPICE models and equivalent 
       circuits that are needed for circuit design, introductions
       to the most important specific devices (photonic devices, 
       JFETs and MESFETs, negative-resistance diodes, and power 
       devices), and an overview of integrated-circuit 
       technologies. The chapters and the sections in each 
       chapter are organized so as to enable instructors to 
       select more rigorous and design-related topics as they see
       fit. </strong>New to this Edition</strong> * A new chapter
       on the physics of nanoscale devices * A revised chapter on
       the energy-band model and fully reworked and updated 
       material on crystals to include graphene and carbon 
       nanotubes * A revised P-N junction chapter to emphasize 
       the current mechanisms that are relevant to modern devices
       * JFETs and MESFETs in a stand-alone chapter * Fifty-seven
       new problems and eleven new examples"--|cProvided by 
       publisher 
520    "This dynamic text applies physics concepts and equations 
       to practical, real-world applications of semiconductor 
       device theory"--|cProvided by publisher 
650 00 Semiconductors